硫硒化鉬晶體 MoSSe(Molybdenum Sulfide Diselenide)
晶體尺寸:~6毫米
電學性能:半導體
晶體結(jié)構(gòu):六邊形
晶胞參數(shù):取決于合金成分:a = b = 0.31 -0.33 nm and c = 1.21 -1.29 nm, α = β = 90°, γ = 120°
晶體類型:合成
晶體純度:>99.995%
Stoichiometric analysis of a single crystal MoSSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal MoSSe. Measurement was performed with a 785 nm Raman system at room temperature.