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當(dāng)前位置:泰州巨納新能源有限公司>>二維材料>>硒化物晶體>> GaSSe 硒化硫鎵晶體
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品 牌2D Semiconductors
廠商性質(zhì)生產(chǎn)商
所 在 地泰州市
更新時(shí)間:2024-06-03 10:38:10瀏覽次數(shù):681次
聯(lián)系我時(shí),請(qǐng)告知來(lái)自 化工儀器網(wǎng)GaTe 碲化鎵晶體 (Gallium Telluride)
供貨周期 | 現(xiàn)貨 | 應(yīng)用領(lǐng)域 | 環(huán)保,化工,能源,綜合 |
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The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are perfectly layered in the c-axis direction, comes ready for exfoliation, and crystals have an impressive environmental stability. Single crystal GaSeTe comes ready for exfoliation and is ideal for 2D research. GaSeTe alloys only come at ~50% (GaSe0.5Te0.5) alloying ratio due to phase separation phenomena taking place at other compositions.
Properties of GaSSe vdW crystals
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