CVD銅基單層氮化硼薄膜
參考價(jià) | ¥ 7579.65 |
訂貨量 | ≥1 |
- 公司名稱 泰州巨納新能源有限公司
- 品牌 2D Semiconductors
- 型號(hào)
- 產(chǎn)地
- 廠商性質(zhì) 生產(chǎn)廠家
- 更新時(shí)間 2024/6/3 16:47:50
- 訪問次數(shù) 870
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供貨周期 | 現(xiàn)貨 | 應(yīng)用領(lǐng)域 | 環(huán)保,化工,能源,綜合 |
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Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.
Properties of h-BN