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Ossila材料TFB CAS:220797-16-0
- 公司名稱(chēng) 深圳市澤拓生物科技有限公司
- 品牌 Ossila/歐西拉
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| 產(chǎn)地類(lèi)別 | 進(jìn)口 |
|---|
只用于動(dòng)物實(shí)驗(yàn)研究等
General Information
| CAS number | 220797-16-0 |
| Chemical formula | (C51H61N)n |
| Molecular weight | Mn = 17,468, Mw = 31,206 KDa (PD = 1.79) |
| Absorption | λmax 390 nm (in THF) |
| Fluorescence | λem 295 nm, 435 nm (in THF) |
| HOMO/LUMO | HOMO = 5.3 eV, LUMO = 2.3 eV |
| Solvents | THF, Toluene and Chloroform |
| Synonyms | Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) |
| Classification / Family | Hole transport material (HTL), Hole injection material (HIL), Electron blocking material (EBL), OLEDs, Perovskite solar cells, Organic and printed electronics |
Product Details
| Purity | >99% |
| Melting point | n.a. |
| Colour | Pale yellow powder/fibers |
Chemical Structure
Chemical Structure of Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB); CAS No. 220797-16-0; Chemical Formula (C51H61N)n.
Applications
Poly(9,9-dioctylfluorene-alt-N-(4-sec-butylphenyl)-diphenylamine) (TFB) is a triarylamine based semiconductor with a band gap of 3 eV (HOMO and LUMO levels of 5.3 and 2.3 eV, respectively) and a relatively high hole mobility of 2 ×10-3 cm2 V-1 s-1.
Due to its low ionisation potential and high hole mobility, TFB serves primarily as hole transport layer (HTL), hole-injection layer (HIL) and electron-blocking layer (EBL) material in organic electronic devices. When built into device as an interface material, TFB as an electron blocking layer will not only reduce the chance of electron leakage, but also reduce the possibility of exciton quenching between the interface of the active layer and charge transport layer (F8BT/MoOx for example).
Ossila材料TFB CAS:220797-16-0
| Device structure | ITO (120 nm)/PDOT:PSS(50 nm)/TFB (5 nm)/PYGTPA* (75 nm)/PEGPF* (10 nm)/Ca (10 nm)/Al (100 nm) [1] |
| Colour | Deep blue  |
| Max. luminance | 9,242 cd/m2 |
| Max. Current Efficiency | 0.85 cd/A |
| Bias | 4.3 V |
Ossila材料TFB CAS:220797-16-0
| Device structure | ITO/c-ZnO (50 nm)/F8BT (80 nm)/MoO3(10 nm)/Au (50 nm) [2] | ITO/c-ZnO (50 nm)/F8BT (80 nm)/TFB (60 nm)/MoO3 (10 nm)/Au (50 nm) [2] |
| Colour | Green  | Green |
| Max. luminance | 9,370 cd/m2 | 16,460 cd/m2 |
| Max. Current Efficiency | 0.34 cd/A | 0.93 cd/A |
| Bias | ~ 0.60 V | ~ 0.87 V |
| Device structure | ITO/ZnO/CsPbI3/TFB (60 nm)/MoO3 (5 nm)/Ag (80 nm) [3] |
| Colour | Red  |
| Max. Luminance | 206 cd/m2 |
| Max. EQE | 5.7% |
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